2N6847
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6847
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15(max)
nC
trⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO39
2N6847
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6847
Datasheet (PDF)
..1. Size:130K international rectifier
2n6847 irff9220.pdf 
PD - 90553CIRFF9220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847HEXFETTRANSISTORS JANTXV2N6847THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9220 -200V 1.5 -2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces
0.1. Size:256K no
2n6845u 2n6847u 2n6847u.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/563G shall be completed by 9 February 2013. 9 November 2012 SUPERSEDING MIL-PRF-19500/563F 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U, JA
9.1. Size:133K international rectifier
2n6849 irff9130.pdf
PD - 90550DIRFF9130 JANTX2N6849REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849HEXFETTRANSISTORS JANS2N6849THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry an
9.2. Size:130K international rectifier
2n6845 irff9120.pdf
PD - 90552CIRFF9120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845HEXFETTRANSISTORS JANTXV2N6845THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9120 -100V 0.60 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proce
9.3. Size:19K semelab
2n6845lcc4.pdf
2N6845LCC4IRFE9120MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040)VDSS -100V 2.16 (0.085)12 13 14 15 161.39 (0.055)ID(cont) -3.5A1.02 (0.040)11 17RDS(on) 0.610 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)8 20.51 (0.020)FEATURES0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3
9.4. Size:120K semelab
2n6849hp.pdf
P-CHANNEL POWER MOSFET 2N6849HP MOSFET Transistor In A Hermetic Metal TO-205AD Package Single Pulse Avalanche Energy Rated Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage -100V VDG RGS = 20K Drain Gat
9.5. Size:147K microsemi
2n6849u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS JAN 2N6849 2N6849UJANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source
Datasheet: 2N6801-SM
, 2N6802
, 2N6802JANTX
, 2N6802JANTXV
, 2N6802SM
, 2N6823
, 2N6826
, 2N6845
, STF13NM60N
, 2N6849
, 2N6849L
, 2N6851
, 2N6901
, 2N6901JANTX
, 2N6901JANTXV
, 2N6902
, 2N6902JANTX
.
