FDC654P Datasheet and Replacement

May 2003 FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 3.6 A, 30 V. RDS(ON) = 75 m @ VGS = 10 V using Fairchilds advanced PowerTrench process. It RDS(ON) = 125 m @ VGS = 4.5 V has been optimized for battery power management applications. Low gate charge (6.2 nC

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThese N-Channel Logic Level MOSFETs are2.5 A, 30 V. RDS(ON) = 0.095 @ VGS = 10 Vproduced using Fairchild Semiconductor's advanced RDS(ON) = 0.145 @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Very fas

June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced using6.3 A, 30 V. RDS(ON) = 0.027 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.035 @ VGS = 4.5 V.that has been especially tailored to minimize on-stateFast switching.resistance and yet main

November 2011FDC658APSingle P-Channel Logic Level PowerTrench MOSFET-30V, -4A, 50m General Description FeaturesThis P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4AFairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4AApplications

January 2010FDC655BNtmSingle N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mFeatures General Description Max rDS(on) = 25 m at VGS = 10 V, ID = 6.3 AThis N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 33 m at VGS = 4.5 V, ID = 5.5 Athat has been especially tailored to minimize t

November 1997 FDC653N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.055 @ VGS = 4.5 V.density, DMOS technology. This very high density process isProprietary SuperSOTTM-6 pac

February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThis P-Channel Logic Level MOSFET is produced-4 A, -30 V. RDS(ON) = 0.050 @ VGS = -10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.075 @ VGS = -4.5 V.PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainLo

February 1999FDC6506PDual P-Channel Logic Level PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel logic level MOSFETs are produced using -1.8 A, -30 V. RDS(on) = 0.170 @ VGS = -10 VFairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.280 @ VGS = -4.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain low g

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThese N-Channel Logic Level MOSFETs are2.5 A, 30 V. RDS(ON) = 0.095 @ VGS = 10 Vproduced using Fairchild Semiconductor's advanced RDS(ON) = 0.145 @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Very fas

FDC658APSingle P-Channel Logic Level PowerTrench MOSFET-30V, -4A, 50m General Description FeaturesThis P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4AON Semiconductor advanced PowerTrench process. It has been optimized for battery power management Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4Aapplications. Low Gate ChargeAppli

November 1997 FDC653N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.055 @ VGS = 4.5 V.density, DMOS technology. This very high density process isProprietary SuperSOTTM-6 pac

SMD Type MOSFETP-Channel MOSFETFDC658AP (KDC658AP)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)2 31 RDS(ON) 75m (VGS =-4.5V)+0.020.15 -0.02+0.01 Low Gate Charge-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Maximum

FDC658APwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Ch

FDC6506Pwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Ap