CED04N6 Spec and Replacement
Type Designator: CED04N6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO251
CED04N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED04N6 Specs
ceu04n6 ced04n6.pdf
CED04N6/CEU04N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 3.4A, RDS(ON) = 2.4 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc =... See More ⇒
ceu04n65 ced04n65.pdf
CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.2A, RDS(ON) = 2.8 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc... See More ⇒
ceu04n7g ced04n7g.pdf
CED04N7G/CEU04N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 3.5A, RDS(ON) = 3.3 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ot... See More ⇒
Detailed specifications: CED02N65A , CED02N65G , CED02N6A , CED02N6G , CED02N7G , CED02N7G-1 , CED02N9 , CED03N8 , IRLZ44N , CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , CED12N10L .
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