CED04N6 MOSFET. Datasheet pdf. Equivalent
Type Designator: CED04N6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 70 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 3.4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 75 pF
Maximum Drain-Source On-State Resistance (Rds): 2.4 Ohm
Package: TO251
CED04N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED04N6 Datasheet (PDF)
1.1. ceu04n65 ced04n65.pdf 
Size:380K _cet
CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.2A, RDS(ON) = 2.8? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25
1.2. ceu04n6 ced04n6.pdf Size:382K _cet
CED04N6/CEU04N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 3.4A, RDS(ON) = 2.4? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C
4.1. ceu04n7g ced04n7g.pdf Size:416K _cet
CED04N7G/CEU04N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 3.5A, RDS(ON) = 3.3? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwi
Datasheet: CED02N65A , CED02N65G , CED02N6A , CED02N6G , CED02N7G , CED02N7G-1 , CED02N9 , CED03N8 , IRFZ46N , CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , CED12N10L .
