All MOSFET. CED12N10L Datasheet

 

CED12N10L Datasheet and Replacement


   Type Designator: CED12N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: TO251
 

 CED12N10L substitution

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CED12N10L Datasheet (PDF)

 ..1. Size:571K  cet
 ceu12n10l ced12n10l.pdf pdf_icon

CED12N10L

CED12N10L/CEU12N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MA

 ..2. Size:830K  cn vbsemi
 ced12n10l.pdf pdf_icon

CED12N10L

CED12N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwis

 6.1. Size:410K  cet
 ceu12n10 ced12n10.pdf pdf_icon

CED12N10L

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

 6.2. Size:411K  cet
 ced12n10 ceu12n10.pdf pdf_icon

CED12N10L

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

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Datasheet: CED04N6 , CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , IRFB4110 , CED14G04 , CEFF634 , CEFF640 , CEPF634 , CEPF640 , CEU01N65 , CEU01N65A , CEU01N6G .

History: 2SK1602 | GSM9435WS | CS6768 | IPP65R660CFD | MIC94052BC6TR | CS7N60FA9HD | 2SK856

Keywords - CED12N10L MOSFET datasheet

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