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CED12N10L Specs and Replacement


   Type Designator: CED12N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: TO251
 

 CED12N10L substitution

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CED12N10L Specs

 ..1. Size:571K  cet
ceu12n10l ced12n10l.pdf pdf_icon

CED12N10L

CED12N10L/CEU12N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MA... See More ⇒

 ..2. Size:830K  cn vbsemi
ced12n10l.pdf pdf_icon

CED12N10L

CED12N10L www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwis... See More ⇒

 6.1. Size:410K  cet
ceu12n10 ced12n10.pdf pdf_icon

CED12N10L

CED12N10/CEU12N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o... See More ⇒

 6.2. Size:411K  cet
ced12n10 ceu12n10.pdf pdf_icon

CED12N10L

CED12N10/CEU12N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o... See More ⇒

Detailed specifications: CED04N6 , CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , AON6414A , CED14G04 , CEFF634 , CEFF640 , CEPF634 , CEPF640 , CEU01N65 , CEU01N65A , CEU01N6G .

Keywords - CED12N10L MOSFET specs

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