CEU01N65A PDF and Equivalents Search

 

CEU01N65A PDF Specs and Replacement


   Type Designator: CEU01N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: TO252
 

 CEU01N65A substitution

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CEU01N65A PDF Specs

 ..1. Size:393K  cet
ceu01n65a ced01n65a.pdf pdf_icon

CEU01N65A

CED01N65A/CEU01N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ... See More ⇒

 6.1. Size:395K  cet
ceu01n65 ced01n65.pdf pdf_icon

CEU01N65A

CED01N65/CEU01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = ... See More ⇒

 7.1. Size:408K  cet
ced01n6g ceu01n6g.pdf pdf_icon

CEU01N65A

CED01N6G/CEU01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source ... See More ⇒

 8.1. Size:415K  cet
ced01n7 ceu01n7.pdf pdf_icon

CEU01N65A

CED01N7/CEU01N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe... See More ⇒

Detailed specifications: CED12N10 , CED12N10L , CED14G04 , CEFF634 , CEFF640 , CEPF634 , CEPF640 , CEU01N65 , IRF630 , CEU01N6G , CEU01N7 , CEU02N65A , CEU02N65G , CEU02N6A , CEU02N6G , CEU02N7G , CEU02N7G-1 .

Keywords - CEU01N65A MOSFET specs

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