CEU02N7G-1 Specs and Replacement

Type Designator: CEU02N7G-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 720 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.75 Ohm

Package: TO252

CEU02N7G-1 substitution

- MOSFET ⓘ Cross-Reference Search

 

CEU02N7G-1 datasheet

 ..1. Size:666K  cet
 ceu02n7g-1 ced02n7g-1.pdf pdf_icon

CEU02N7G-1

CED02N7G-1/CEU02N7G-1 N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V, 1.6A, RDS(ON) = 6.75 @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING... See More ⇒

 6.1. Size:397K  cet
 ceu02n7g ced02n7g.pdf pdf_icon

CEU02N7G-1

CED02N7G/CEU02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.6A, RDS(ON) = 6.75 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o... See More ⇒

 8.1. Size:417K  cet
 ceu02n65g ced02n65g.pdf pdf_icon

CEU02N7G-1

CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ... See More ⇒

 8.2. Size:416K  cet
 ceu02n65a ced02n65a.pdf pdf_icon

CEU02N7G-1

CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc ... See More ⇒

SHOW MORE

Detailed specifications: CEU01N65A, CEU01N6G, CEU01N7, CEU02N65A, CEU02N65G, CEU02N6A, CEU02N6G, CEU02N7G, IRLB4132, CEU02N9, CEU03N8, CEU04N6, CEU04N65, CEU04N7G, CEU05N65, CEU06N7, CEU07N65A

Keywords - CEU02N7G-1 MOSFET specs

 CEU02N7G-1 cross reference

 CEU02N7G-1 equivalent finder

 CEU02N7G-1 pdf lookup

 CEU02N7G-1 substitution

 CEU02N7G-1 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.