CED4060A Specs and Replacement

Type Designator: CED4060A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO251

CED4060A substitution

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CED4060A datasheet

 ..1. Size:398K  cet
ced4060a ceu4060a.pdf pdf_icon

CED4060A

CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe... See More ⇒

 ..2. Size:398K  cet
ceu4060a ced4060a.pdf pdf_icon

CED4060A

CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe... See More ⇒

 0.1. Size:397K  cet
ceu4060al ced4060al.pdf pdf_icon

CED4060A

CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIM... See More ⇒

 0.2. Size:397K  cet
ced4060al ceu4060al.pdf pdf_icon

CED4060A

CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIM... See More ⇒

Detailed specifications: CED16N10L, CED21A2, CED25N15L, CED3060, CED3100, CED3120, CED3172, CED3252, AO4407, CED4060AL, CED40N10, CED4204, CED540L, CED540N, CED55N10, CED6056, CED6060N

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