CEU630N Specs and Replacement
Type Designator: CEU630N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO252
CEU630N substitution
- MOSFET ⓘ Cross-Reference Search
CEU630N datasheet
ceu630n ced630n.pdf
CED630N/CEU630N N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth... See More ⇒
ceu6336 ced6336.pdf
CED6336/CEU6336 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 25A , RDS(ON) = 41m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABS... See More ⇒
ceu6336.pdf
CEU6336 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise not... See More ⇒
Detailed specifications: CEU4204, CEU540L, CEU540N, CEU55N10, CEU6056, CEU6060N, CEU6086, CEU6186, MMIS60R580P, CEU6336, CEU6426, CEU655, CEU730G, CEU73A3G, CEU740A, CEU75A3, CEU830G
Keywords - CEU630N MOSFET specs
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