CEU6426 Datasheet and Replacement
Type Designator: CEU6426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.9 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO252
CEU6426 substitution
CEU6426 Datasheet (PDF)
ced6426 ceu6426.pdf
CED6426/CEU6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 16A , RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU
ceu6426 ced6426.pdf
CED6426/CEU6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 16A , RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU
Datasheet: CEU540N , CEU55N10 , CEU6056 , CEU6060N , CEU6086 , CEU6186 , CEU630N , CEU6336 , BS170 , CEU655 , CEU730G , CEU73A3G , CEU740A , CEU75A3 , CEU830G , CEU83A3 , CEU83A3G .
History: DAC040N120Z1 | TPA65R940C
Keywords - CEU6426 MOSFET datasheet
CEU6426 cross reference
CEU6426 equivalent finder
CEU6426 lookup
CEU6426 substitution
CEU6426 replacement
History: DAC040N120Z1 | TPA65R940C
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