CEU93A3 Datasheet and Replacement
Type Designator: CEU93A3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 125 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 980 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO252
- MOSFET Cross-Reference Search
CEU93A3 Datasheet (PDF)
ceu93a3 ced93a3.pdf

CED93A3/CEU93A3N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 125A, RDS(ON) = 3.2m @VGS = 10V. RDS(ON) = 6.2m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)S
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SDF9N100JEA-D | IRFHM792PBF | CED05N8 | AON6794 | IXTN210P10T | BUZ84 | BL10N70-A
Keywords - CEU93A3 MOSFET datasheet
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History: SDF9N100JEA-D | IRFHM792PBF | CED05N8 | AON6794 | IXTN210P10T | BUZ84 | BL10N70-A



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