CEG8205A Specs and Replacement
Type Designator: CEG8205A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TSSOP8
CEG8205A substitution
- MOSFET ⓘ Cross-Reference Search
CEG8205A datasheet
ceg8205a.pdf
CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. D 1 8 D Lead free product is acquired. 2 7 S2 S1 TSSOP-8 for Surface Mount Package. S1 3 6 S2 4 G1 5 G2 G2 S2 S2 G1 D S1 S1 D TSSOP... See More ⇒
ceg8205.pdf
CEG8205 www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATIN... See More ⇒
ceg8208.pdf
CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D D 20V, 6.5A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V. *1K *1K Super High dense cell design for extremely low RDS(ON). G1 G2 High power and current handing capability. Lead free product is acquired. S1 S2 TSSOP-8 for Surface Mount Package. *Typical value by design ESD Protected HBM 2000... See More ⇒
Detailed specifications: CED84A4, CED85A3, CED93A3, CEDF634, CEDF640, CEE02N6A, CEE02N6G, CEG2288, 7N65, CEG8208, CEH2288, CEH2310, CEH2316, CEH2609, CEK01N65, CEK01N65A, CEK01N6G
Keywords - CEG8205A MOSFET specs
CEG8205A cross reference
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CEG8205A replacement
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