CEG8205A Datasheet and Replacement
Type Designator: CEG8205A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.8 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TSSOP8
- MOSFET Cross-Reference Search
CEG8205A Datasheet (PDF)
ceg8205a.pdf

CEG8205ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.D 1 8 DLead free product is acquired.2 7 S2S1TSSOP-8 for Surface Mount Package.S1 3 6 S24G1 5 G2G2S2S2G1DS1S1DTSSOP
ceg8205.pdf

CEG8205www.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATIN
ceg8208.pdf

CEG8208Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESD D20V, 6.5A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V.*1K *1KSuper High dense cell design for extremely low RDS(ON).G1 G2High power and current handing capability.Lead free product is acquired.S1 S2TSSOP-8 for Surface Mount Package.*Typical value by design ESD Protected: HBM 2000
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Keywords - CEG8205A MOSFET datasheet
CEG8205A cross reference
CEG8205A equivalent finder
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History: CEN2321A | AP4924GM



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