All MOSFET. CEM1010 Datasheet

 

CEM1010 Datasheet and Replacement


   Type Designator: CEM1010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: SO8
 

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CEM1010 Datasheet (PDF)

 ..1. Size:432K  cet
 cem1010.pdf pdf_icon

CEM1010

CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

 8.1. Size:406K  cet
 cem101.pdf pdf_icon

CEM1010

CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

Datasheet: CEK01N65A , CEK01N6G , CEK01N7 , CEK7002A , CEM0215 , CEM0310 , CEM0410 , CEM0415 , AON7410 , CEM2182 , CEM2539A , CEM26138 , CEM2939 , CEM3032 , CEM3060 , CEM3109 , CEM3120 .

History: IXTV230N085TS | DATD063N06N | 2SK2100-01MR | AP9434GM | 2N65L-TF2-T | IXTH15N45A | XP161A1355PR-G

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