CEM1010 Specs and Replacement

Type Designator: CEM1010

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm

Package: SO8

CEM1010 substitution

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CEM1010 datasheet

 ..1. Size:432K  cet
 cem1010.pdf pdf_icon

CEM1010

CEM1010 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not... See More ⇒

 8.1. Size:406K  cet
 cem101.pdf pdf_icon

CEM1010

CEM1010 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not... See More ⇒

Detailed specifications: CEK01N65A, CEK01N6G, CEK01N7, CEK7002A, CEM0215, CEM0310, CEM0410, CEM0415, SPP20N60C3, CEM2182, CEM2539A, CEM26138, CEM2939, CEM3032, CEM3060, CEM3109, CEM3120

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.