CEF10N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEF10N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 33 nC
Rise Time (tr): 73 nS
Drain-Source Capacitance (Cd): 185 pF
Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm
Package: TO220F
CEF10N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEF10N65 Datasheet (PDF)
cep10n65 ceb10n65 cef10n65.pdf
CEP10N65/CEB10N65CEF10N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP10N65 650V 0.85 10A 10VCEB10N65 650V 0.85 10A 10VCEF10N65 650V 0.85 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CE
cep10n6 ceb10n6 cef10n6.pdf
CEP10N6/CEB10N6 CEF10N6N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP10N6 600V 0.75 10A 10VCEB10N6 600V 0.75 10A 10VCEF10N6 600V 0.75 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PA
cep10n4 ceb10n4 cei10n4 cef10n4.pdf
CEP10N4/CEB10N4CEI10N4/CEF10N4N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP10N4 450V 0.7 10A 10VCEB10N4 450V 0.7 10A 10VCEI10N4 450V 0.7 10A 10VCEF10N4 450V 0.7 10A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO
Datasheet: CEM3060 , CEM3109 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 , CEC8218 , CEF05N6 , QM0930M3 , CEF12N65 , CEH8205 , CEM2539 , CEM73A3G , CEZ3R03 , CEM7808 , CEP10N65 , CEP12N65 .
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