CEM3172
MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM3172
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 8.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 125
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
SO8
CEM3172
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM3172
Datasheet (PDF)
..1. Size:372K cet
cem3172.pdf 
CEM3172N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 8.9A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis
8.1. Size:387K cet
cem3178.pdf
CEM3178PRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS T
9.1. Size:505K cet
cem3138.pdf
CEM3138Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 9.1A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V.30V, 6.9A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 35m @VGS = 4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.Surface mount Pac
9.2. Size:615K cet
cem3109.pdf
CEM3109Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARYFEATURES30V, 10A, RDS(ON) = 14m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V.-30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.
9.3. Size:387K cet
cem3120.pdf
CEM3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 10A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise
9.4. Size:273K cet
cem3128.pdf
CEM3128Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 9A, RDS(ON) = 16m @VGS = 10V. RDS(ON) = 23m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C unles
9.5. Size:882K cn vbsemi
cem3128.pdf
CEM3128www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D
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