All MOSFET. CEM6428 Datasheet

 

CEM6428 Datasheet and Replacement


   Type Designator: CEM6428
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SO8
 

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CEM6428 Datasheet (PDF)

 ..1. Size:407K  cet
 cem6428.pdf pdf_icon

CEM6428

CEM6428Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4.1A, RDS(ON) = 68m @VGS = 10V. RDS(ON) = 86m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

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 cem6426.pdf pdf_icon

CEM6428

CEM6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4.7A, RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

Datasheet: CEM6056 , CEM6086 , CEM6086L , CEM6088 , CEM6088L , CEM6186 , CEM6188 , CEM6426 , 8N60 , CEM6600 , CEM6608 , CEM6659 , CEM7350 , CEM7350L , CEM8208 , CEM8809 , CEM8958 .

History: AP90P03Q | BRCS120P012MC | 14N50G-TF1-T | TT8M3 | CEN2321A | IXFT23N80Q | 14N50L-TA3-T

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