CEM7350 Datasheet and Replacement
Type Designator: CEM7350
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.6(2) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 8(11) nS
Cossⓘ - Output Capacitance: 95(115) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: SO8
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CEM7350 Datasheet (PDF)
cem7350.pdf

CEM7350Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES 100V, 2.6A, RDS(ON) = 190m @VGS = 10V.-100V, -2.0A, RDS(ON) = 320m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S1 G1 S2 G2ABSOLUTE MAX
cem7350l.pdf

CEM7350LDual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES 100V, 2.6A, RDS(ON) = 190m @VGS = 5V. RDS(ON) = 180m @VGS = 10V.-100V, -2.0A, RDS(ON) = 320m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D2High power and current handing capability.8 7 6 5Lead-free plating ; RoHS compliant.Surface mount Package.SO-81
cem73a3g.pdf

CEM73A3GN-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 12.5A, RDS(ON) = 11m @VGS = 10V. RDS(ON) = 18m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Keywords - CEM7350 MOSFET datasheet
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