CEM7350L Specs and Replacement
Type Designator: CEM7350L
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.6(2) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3(11) nS
Cossⓘ - Output Capacitance: 85(115) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: SO8
CEM7350L substitution
- MOSFET ⓘ Cross-Reference Search
CEM7350L datasheet
cem7350l.pdf
CEM7350L Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 100V, 2.6A, RDS(ON) = 190m @VGS = 5V. RDS(ON) = 180m @VGS = 10V. -100V, -2.0A, RDS(ON) = 320m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 High power and current handing capability. 8 7 6 5 Lead-free plating ; RoHS compliant. Surface mount Package. SO-8 1... See More ⇒
cem7350.pdf
CEM7350 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 100V, 2.6A, RDS(ON) = 190m @VGS = 10V. -100V, -2.0A, RDS(ON) = 320m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAX... See More ⇒
cem73a3g.pdf
CEM73A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 12.5A, RDS(ON) = 11m @VGS = 10V. RDS(ON) = 18m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth... See More ⇒
Detailed specifications: CEM6186, CEM6188, CEM6426, CEM6428, CEM6600, CEM6608, CEM6659, CEM7350, MMIS60R580P, CEM8208, CEM8809, CEM8958, CEM8958A, CEM8968, CEM9436A, CEM9926A, CEM9935A
Keywords - CEM7350L MOSFET specs
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