CEM9436A
MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM9436A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038
Ohm
Package:
SO8
CEM9436A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM9436A
Datasheet (PDF)
..1. Size:139K cet
cem9436a.pdf
CEM9436AN-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 6.2A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 52m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe
8.1. Size:384K cet
cem9435.pdf
CEM9435P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -5A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless o
9.1. Size:384K cet
cem9407a.pdf
CEM9407APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES5-60V, -3.7A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 165m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA
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