CEB05P03 Specs and Replacement
Type Designator: CEB05P03
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO263
CEB05P03 substitution
- MOSFET ⓘ Cross-Reference Search
CEB05P03 datasheet
cep05p03 ceb05p03.pdf
CEP05P03/CEB05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A,RDS(ON) = 70m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS... See More ⇒
cep05n65 ceb05n65 cef05n65.pdf
CEP05N65/CEB05N65 CEF05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP05N65 650V 2.4 4.5A 10V CEB05N65 650V 2.4 4.5A 10V CEF05N65 650V 2.4 4.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO... See More ⇒
ceb05n8 cef05n8 cep05n8.pdf
CEP05N8/CEB05N8 CEF05N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP05N8 800V 2.9 4.4A 10V CEB05N8 800V 2.9 4.4A 10V CEF05N8 800V 2.9 4.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF S... See More ⇒
Detailed specifications: CET04N10, CET3055L, CET3252, CET6426, CEU4269, CEU4279, CEV2306, CEA6861, 8205A, CEB12P10, CEB14P20, CEB15P15, CEB20P06, CEB20P10, CEB30P03, CEB35P10, CEB50P03
Keywords - CEB05P03 MOSFET specs
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