CED20P10 MOSFET. Datasheet pdf. Equivalent
Type Designator: CED20P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: TO251
CED20P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED20P10 Datasheet (PDF)
1.1. ced20p10 ceu20p10.pdf 
Size:417K _cet
CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m? @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc
4.1. ced20p06 ceu20p06.pdf Size:428K _cet
CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m? @VGS = -10V. RDS(ON) = 175m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU
Datasheet: CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , IRFP4332 , CED2303 , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , CED4311 , CED6601 .
