All MOSFET. CED20P10 Datasheet

 

CED20P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: CED20P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 210 pF

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: TO251

CED20P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED20P10 Datasheet (PDF)

0.1. ced20p10 ceu20p10.pdf Size:417K _cet

CED20P10 CED20P10

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING

8.1. ced20p06 ceu20p06.pdf Size:428K _cet

CED20P10 CED20P10

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125mΩ @VGS = -10V. RDS(ON) = 175mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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