All MOSFET. CED20P10 Datasheet

 

CED20P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: CED20P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 210 pF

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: TO251

CED20P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CED20P10 Datasheet (PDF)

1.1. ced20p10 ceu20p10.pdf Size:417K _cet

CED20P10
CED20P10

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m? @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc

4.1. ced20p06 ceu20p06.pdf Size:428K _cet

CED20P10
CED20P10

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m? @VGS = -10V. RDS(ON) = 175m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU

 

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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