All MOSFET. CED20P10 Datasheet

 

CED20P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: CED20P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 210 pF

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: TO251

CED20P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED20P10 Datasheet (PDF)

1.1. ced20p10 ceu20p10.pdf Size:417K _cet

CED20P10
CED20P10

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m? @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc

4.1. ced20p06 ceu20p06.pdf Size:428K _cet

CED20P10
CED20P10

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m? @VGS = -10V. RDS(ON) = 175m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU

 

Datasheet: CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , IRFP4332 , CED2303 , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , CED4311 , CED6601 .

Back to Top

 


CED20P10
  CED20P10
  CED20P10
 

social 

LIST

Last Update

MOSFET: SQV120N10-3M8 | SQS850EN | SQS840EN | SQS484EN | SQS482EN | SQS466EEN | SQS464EEN | SQS462EN | SQS460EN | SQS423EN | SQS420EN | SQS405ENW | SQS405EN | SQS404EN | SQS401EN |

 

 

Back to Top