All MOSFET. CEH2321A Datasheet

 

CEH2321A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEH2321A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOP6

 CEH2321A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEH2321A Datasheet (PDF)

 ..1. Size:447K  cet
 ceh2321a.pdf

CEH2321A CEH2321A

CEH2321APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead-free plating ; RoHS compliant.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise note

 7.1. Size:446K  cet
 ceh2321.pdf

CEH2321A CEH2321A

CEH2321P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead-free plating ; RoHS compliant.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter S

 9.1. Size:164K  cet
 ceh2316.pdf

CEH2321A CEH2321A

CEH2316N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6A , RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit

 9.2. Size:340K  cet
 ceh2313.pdf

CEH2321A CEH2321A

CEH2313P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol

 9.3. Size:1163K  cet
 ceh2310.pdf

CEH2321A CEH2321A

CEH2310N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6.2A , RDS(ON) = 33m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D(1,2,5,6,)High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead-free plating ; RoHS compliant.45TSOP-6 package.6G(3)321S(4)TSOP-6ABSOLUTE

 9.4. Size:302K  cet
 ceh2305.pdf

CEH2321A CEH2321A

CEH2305P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4.9A , RDS(ON) = 52m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 119m @VGS = -2.5V. High dense cell design for extremely low RDS(ON).D(1,2,5,6,)Rugged and reliable.Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA

 9.5. Size:428K  cet
 ceh2331.pdf

CEH2321A CEH2321A

CEH2331P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -5.2A , RDS(ON) = 48m @VGS = -4.5V. RDS(ON) = 60m @VGS = -2.5V. RDS(ON) = 78m @VGS = -1.8V. High dense cell design for extremely low RDS(ON).D(1,2,5,6,)Rugged and reliable.Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK2157

 

 
Back to Top