CEH2321A Specs and Replacement

Type Designator: CEH2321A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TSOP6

CEH2321A substitution

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CEH2321A datasheet

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 ceh2321a.pdf pdf_icon

CEH2321A

CEH2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise note... See More ⇒

 7.1. Size:446K  cet
 ceh2321.pdf pdf_icon

CEH2321A

CEH2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter S... See More ⇒

 9.1. Size:164K  cet
 ceh2316.pdf pdf_icon

CEH2321A

CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit... See More ⇒

 9.2. Size:340K  cet
 ceh2313.pdf pdf_icon

CEH2321A

CEH2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol ... See More ⇒

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Detailed specifications: CED6861, CED95P04, CEF14P20, CEF15P15, CEF6601, CEH2305, CEH2313, CEH2321, TK10A60D, CEH2331, CEH3456, CEM2163, CEM2187, CEM2281, CEM2401, CEM2407, CEM3053

Keywords - CEH2321A MOSFET specs

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