CEM4953 Datasheet and Replacement
Type Designator: CEM4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SO8
CEM4953 substitution
CEM4953 Datasheet (PDF)
cem4953a.pdf

CEM4953ADual P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.5A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25
cem4953h.pdf

CEM4953HDual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4.5A, RDS(ON) = 64m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM
cem4948.pdf

CEM4948Dual P-Channel Enhancement Mode Field Effect TransistorFEATURES5-60V, -3.1A, RDS(ON) = 120m @VGS = -10V. RDS(ON) = 150m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA =
Datasheet: CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , IRF520 , CEM4953A , CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 , CEM8435A .
History: HY4306B | CEM4953A | AF10N65S | BUK112-50GL | IRFSL5620 | KP809V1 | DMP3015LSS
Keywords - CEM4953 MOSFET datasheet
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History: HY4306B | CEM4953A | AF10N65S | BUK112-50GL | IRFSL5620 | KP809V1 | DMP3015LSS



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