CEM4953A Specs and Replacement
Type Designator: CEM4953A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SO8
CEM4953A substitution
CEM4953A datasheet
cem4953a.pdf
CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 ... See More ⇒
cem4953h.pdf
CEM4953H Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.5A, RDS(ON) = 64m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM... See More ⇒
cem4948.pdf
CEM4948 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -60V, -3.1A, RDS(ON) = 120m @VGS = -10V. RDS(ON) = 150m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA =... See More ⇒
Detailed specifications: CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , AO3400A , CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 , CEM8435A , CEM9407A .
Keywords - CEM4953A MOSFET specs
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CEM4953A replacement
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