CEM6601 Specs and Replacement

Type Designator: CEM6601

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm

Package: SO8

CEM6601 substitution

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CEM6601 datasheet

 ..1. Size:424K  cet
 cem6601.pdf pdf_icon

CEM6601

CEM6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -4A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other... See More ⇒

 ..2. Size:787K  cn vbsemi
 cem6601.pdf pdf_icon

CEM6601

CEM6601 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETE... See More ⇒

 8.1. Size:651K  cet
 cem6600.pdf pdf_icon

CEM6601

CEM6600 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise... See More ⇒

 8.2. Size:641K  cet
 cem6608.pdf pdf_icon

CEM6601

CEM6608 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles... See More ⇒

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Detailed specifications: CEM4207, CEM4301, CEM4311, CEM4435A, CEM4948, CEM4953, CEM4953A, CEM4953H, STP65NF06, CEM6607, CEM6861, CEM6867, CEM8311, CEM8435A, CEM9407A, CEM9435, CEM9435A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.