All MOSFET. CEM9435A Datasheet

 

CEM9435A Datasheet and Replacement


   Type Designator: CEM9435A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SO8
 

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CEM9435A Datasheet (PDF)

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CEM9435A

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CEM9435A

CEM9435P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -5A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless o

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CEM9435A

CEM9436AN-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 6.2A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 52m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

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CEM9435A

CEM9407APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES5-60V, -3.7A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 165m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA

Datasheet: CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 , CEM8435A , CEM9407A , CEM9435 , 8N60 , CEM9953A , CEN2301 , CEP05P03 , CEP12P10 , CEP14P20 , CEP15P15 , CEP20P06 , CEP20P10 .

History: SM2307PSA | AP85T10GR-HF | VS3625DP2-G | TSM4433CS | SSM3K339R | AM3933P | CED75A3

Keywords - CEM9435A MOSFET datasheet

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