CEP12P10 Specs and Replacement

Type Designator: CEP12P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.315 Ohm

Package: TO220

CEP12P10 substitution

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CEP12P10 datasheet

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 cep12p10 ceb12p10.pdf pdf_icon

CEP12P10

CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒

 9.1. Size:411K  cet
 cep12n6 ceb12n6 cef12n6.pdf pdf_icon

CEP12P10

CEP12N6/CEB12N6 CEF12N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N6 600V 0.65 12A 10V CEB12N6 600V 0.65 12A 10V CEF12N6 600V 0.65 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 9.2. Size:396K  cet
 cep12n5 ceb12n5 cef12n5.pdf pdf_icon

CEP12P10

CEP12N5/CEB12N5 CEF12N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N5 500V 0.54 12A 10V CEB12N5 500V 0.54 12A 10V CEF12N5 500V 0.54 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 9.3. Size:386K  cet
 cep12n65 ceb12n65 cef12n65.pdf pdf_icon

CEP12P10

CEP12N65/CEB12N65 CEF12N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N65 650V 0.73 12A 10V CEB12N65 650V 0.73 12A 10V CEF12N65 650V 0.73 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C... See More ⇒

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Detailed specifications: CEM8311, CEM8435A, CEM9407A, CEM9435, CEM9435A, CEM9953A, CEN2301, CEP05P03, RU7088R, CEP14P20, CEP15P15, CEP20P06, CEP20P10, CEP30P03, CEP35P10, CEP50P03, CEP6601

Keywords - CEP12P10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.