FDN357N Datasheet and Replacement

March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 N-Channel logic level enhancement mode power 1.9 A, 30 V, RDS(ON) = 0.090 @ VGS = 4.5 Vfield effect transistors are produced using Fairchild'sRDS(ON) = 0.060 @ VGS = 10 V. proprietary, high cell density, DMOS technology. This very highIndustry sta

FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor FeaturesGeneral Description1.9 A, 30 V, RDS(ON) = 0.090 @ VGS = 4.5 VSuperSOTTM-3 N-Channel logic level enhancement mode power field RDS(ON) = 0.060 @ VGS = 10 V. effect transistors are produced using ON Semiconductor's proprietary, high Industry standard outline SOT-23 surface mountcell density, D

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

August 2005FDN352APSingle P-Channel, PowerTrench MOSFET Features General Description 1.3 A, 30V RDS(ON) = 180 m @ VGS = 10V This P-Channel Logic Level MOSFET is produced using Fair-1.1 A, 30V RDS(ON) = 300 m @ VGS = 4.5V child Semiconductor advanced Power Trench process that hasbeen especially tailored to minimize the on-state resistance and High pe

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

January 2003 FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 1.5 A, 30 V. RDS(ON) = 125 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 200 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state re

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V.PowerTrench process that has been especially tailoredto minimize on-state resistance and yet maintainVery fast switching

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

January 2003 FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 1.5 A, 30 V. RDS(ON) = 125 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 200 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state re

FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced RDS(ON) = 0.060 @ VGS = 4.5 V.using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching.to minimize on-state resistance and yet maintain Low gate cha

SMD Type MOSFETP-Channel MOSFETFDN352AP (KDN352AP)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-1.3 A (VGS =-10V)1 2 RDS(ON) 180m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 300m (VGS =-4.5V)1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETP-Channel MOSFETFDN352AP (KDN352AP)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) =-30V1 2 ID =-1.3 A (VGS =-10V)+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 180m (VGS =-10V)+0.11.9 -0.1 RDS(ON) 300m (VGS =-4.5V)1. Gate2. SourceD3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol R

FDN359ANN-Channel Enhancement Mode MOSFET Feature DS(ON) GS 30V/3.0A, R = 45m(MAX) @V = 10V. DS(ON) GS R =50m(MAX) @V = 4.5V. DS(ON) GS R =65m(MAX) @V = 2.5V. DS(ON) .Super High dense cell design for extremely low R Reliable and Rugged. SOT-23 SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered System