All MOSFET. CET9435A Datasheet

 

CET9435A Datasheet and Replacement


   Type Designator: CET9435A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22.5 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT223
 

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CET9435A Datasheet (PDF)

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CET9435A

CET9435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -5.3A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain

Datasheet: CES2321 , CES2321A , CES2323 , CES2331 , CET4301 , CET4435A , CET6601 , CET6861 , IRFB4227 , CEU05P03 , CEU11P20 , CEU12P10 , CEU20P06 , CEU20P10 , CEU2303 , CEU30P10 , CEU3301 .

History: WMB090DNV6LG4 | 35N06 | IRFS233 | TPC8033-H

Keywords - CET9435A MOSFET datasheet

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