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CET9435A Specs and Replacement

Type Designator: CET9435A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT223

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CET9435A datasheet

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CET9435A

CET9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain... See More ⇒

Detailed specifications: CES2321, CES2321A, CES2323, CES2331, CET4301, CET4435A, CET6601, CET6861, 10N60, CEU05P03, CEU11P20, CEU12P10, CEU20P06, CEU20P10, CEU2303, CEU30P10, CEU3301

Keywords - CET9435A MOSFET specs

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