CEU05P03 Datasheet and Replacement
Type Designator: CEU05P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO252
CEU05P03 substitution
CEU05P03 Datasheet (PDF)
ced05p03 ceu05p03.pdf

CED05P03/CEU05P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -15A, RDS(ON) = 70m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE
ceu05n65 ced05n65.pdf

CED05N65/CEU05N65N-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 4A, RDS(ON) = 2.4 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless
Datasheet: CES2321A , CES2323 , CES2331 , CET4301 , CET4435A , CET6601 , CET6861 , CET9435A , IRFB4110 , CEU11P20 , CEU12P10 , CEU20P06 , CEU20P10 , CEU2303 , CEU30P10 , CEU3301 , CEU3423 .
Keywords - CEU05P03 MOSFET datasheet
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