All MOSFET. KTJ6164S Datasheet

 

KTJ6164S MOSFET. Datasheet pdf. Equivalent

Type Designator: KTJ6164S

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: SOT23

KTJ6164S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KTJ6164S Datasheet (PDF)

1.1. ktj6164s.pdf Size:745K _kec

KTJ6164S
KTJ6164S

KTJ6164S SEMICONDUCTOR P CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 ·2.5 Gate Drive. B 1.30+0.20/-0.15 C 1.30 MAX ·Low Threshold Voltage : Vth=-0.5∼-1.5V. 2 3 D 0.40+0.15/-0.05 ·High Speed. E 2.40+0.30/-0.20 1 G 1.90 ·Small Package. H 0.

5.1. ktj6131e.pdf Size:82K _kec

KTJ6164S
KTJ6164S

KTJ6131E SEMICONDUCTOR P CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES B 2.5 Gate Drive. DIM MILLIMETERS _ + A 1.60 0.10 D Low Threshold Voltage : Vth=-0.5 -1.5V. _ 2 B 0.85 0.10 + _ + C 0.70 0.10 High Speed. 3 1 D 0.27+0.10/-0.05 _ Small Package. + E 1.60 0.10 _ + G 1.00 0.10

5.2. ktj6131v.pdf Size:745K _kec

KTJ6164S
KTJ6164S

KTJ6131V SEMICONDUCTOR P CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES E ·2.5 Gate Drive. B ·Low Threshold Voltage : Vth=-0.5∼-1.5V. ·High Speed. DIM MILLIMETERS 2 ·Small Package. _ A 1.2 +0.05 _ B 0.8 +0.05 ·Enhancement-Mode. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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