KTJ6164S Specs and Replacement
Type Designator: KTJ6164S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT23
KTJ6164S substitution
KTJ6164S datasheet
ktj6164s.pdf
KTJ6164S SEMICONDUCTOR P CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 2.5 Gate Drive. B 1.30+0.20/-0.15 C 1.30 MAX Low Threshold Voltage Vth=-0.5 -1.5V. 2 3 D 0.40+0.15/-0.05 High Speed. E 2.40+0.30/-0.20 1 G 1.90 Small Package. H 0.... See More ⇒
ktj6131e.pdf
KTJ6131E SEMICONDUCTOR P CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES B 2.5 Gate Drive. DIM MILLIMETERS _ + A 1.60 0.10 D Low Threshold Voltage Vth=-0.5 -1.5V. _ 2 B 0.85 0.10 + _ + C 0.70 0.10 High Speed. 3 1 D 0.27+0.10/-0.05 _ Small Package. + E 1.60 0.10 _ + G 1.00 0.10... See More ⇒
ktj6131v.pdf
KTJ6131V SEMICONDUCTOR P CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES E 2.5 Gate Drive. B Low Threshold Voltage Vth=-0.5 -1.5V. High Speed. DIM MILLIMETERS 2 Small Package. _ A 1.2 +0.05 _ B 0.8 +0.05 Enhancement-Mode. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 ... See More ⇒
Detailed specifications: CEU6601 , CEU6861 , CEU95P04 , 2N7000A , 2N7000K , 2N7002KA , KTJ6131E , KTJ6131V , SPP20N60C3 , KTK5131E , KTK5131S , KTK5131V , KTK5132E , KTK5132S , KTK5132U , KTK5132V , KTK5133S .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
