All MOSFET. KMA4D5P20X Datasheet

 

KMA4D5P20X MOSFET. Datasheet pdf. Equivalent

Type Designator: KMA4D5P20X

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 ¬įC

Rise Time (tr): 32 nS

Maximum Drain-Source On-State Resistance (Rds): 0.049 Ohm

Package: TSOP6

KMA4D5P20X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMA4D5P20X Datasheet (PDF)

1.1. kma4d5p20xa.pdf Size:831K _kec

KMA4D5P20X
KMA4D5P20X

SEMICONDUCTOR KMA4D5P20XA TECHNICAL DATA P-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook computer power management and other battery powered circuits. FEATURES ·VDSS=-20V, ID=-4.5A. ·Drain-So

1.2. kma4d5p20x.pdf Size:811K _kec

KMA4D5P20X
KMA4D5P20X

SEMICONDUCTOR KMA4D5P20X TECHNICAL DATA P-CH Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES ·VDSS=-20V, ID=-4.5A. ·Drain-Source ON Resistance. : RDS(ON)=60m?(Max.) @ VGS=-4.5V,.ID=-4.5A : RDS(ON)=110m?(Max.) @ VGS=-2.5V,.ID=-3.3A ·Super High Dense Cell Design for Extremely Low RDS(ON) MAXIMUM RATING (Ta=25

 

 

 

 

Datasheet: KF80N08P , KMA010P20Q , KMA2D0DP20X , KMA2D4P20SA , KMA2D7DP20X , KMA2D8P20X , KMA3D0N20SA , KMA3D6N20SA , IRF5210 , KMA4D5P20XA , KMA5D8DP20Q , KMA6D5P20Q , KMA7D0NP30Q , KMB010P30QA , KMB012N30Q , KMB012N40DA , KMB014P30QA .

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