All MOSFET. KMB050N60PA Datasheet

 

KMB050N60PA MOSFET. Datasheet pdf. Equivalent

Type Designator: KMB050N60PA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO220AB

KMB050N60PA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMB050N60PA Datasheet (PDF)

1.1. kmb050n60p.pdf Size:434K _kec

KMB050N60PA
KMB050N60PA

KMB050N60P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ + correction , electronic lamp ballasts based o

1.2. kmb050n60pa.pdf Size:481K _kec

KMB050N60PA
KMB050N60PA

KMB050N60PA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX FEATURES Q C 1.3+0.1/-0.05 _ VDSS= 60V, ID= 50A I + D 0.8 0.1 _ E 3.6 + 0.2

 5.1. kmb054n40dc.pdf Size:816K _kec

KMB050N60PA
KMB050N60PA

SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70

5.2. kmb054n40db.pdf Size:241K _kec

KMB050N60PA
KMB050N60PA

SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70

 5.3. kmb054n40da.pdf Size:237K _kec

KMB050N60PA
KMB050N60PA

SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70

5.4. kmb054n45da.pdf Size:241K _kec

KMB050N60PA
KMB050N60PA

SEMICONDUCTOR KMB054N45DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70

 5.5. kmb054n40ia.pdf Size:903K _kec

KMB050N60PA
KMB050N60PA

SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES ·VDSS=40V, ID=54A. ·Low Drain-Source ON Resistance. : RDS(ON)=8.5mΩ(Max.) @ V

Datasheet: KMA7D0NP30Q , KMB010P30QA , KMB012N30Q , KMB012N40DA , KMB014P30QA , KMB030N30D , KMB035N40DB , KMB050N60P , IRLR2905 , KMB054N40DA , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , KMB060N60PA , KMB080N75PA , KMB2D0N60SA .

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