KMB054N40DB Specs and Replacement
Type Designator: KMB054N40DB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: DPAK
KMB054N40DB substitution
- MOSFET ⓘ Cross-Reference Search
KMB054N40DB datasheet
kmb054n40db.pdf
SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒
kmb054n40dc.pdf
SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒
kmb054n40da.pdf
SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒
kmb054n40ia.pdf
SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. RDS(ON)=8.5m (Max.) @ V... See More ⇒
Detailed specifications: KMB012N30Q, KMB012N40DA, KMB014P30QA, KMB030N30D, KMB035N40DB, KMB050N60P, KMB050N60PA, KMB054N40DA, AO3400A, KMB054N45DA, KMB060N40BA, KMB060N60FA, KMB060N60PA, KMB080N75PA, KMB2D0N60SA, KMB3D0P30SA, KMB3D5N40SA
Keywords - KMB054N40DB MOSFET specs
KMB054N40DB cross reference
KMB054N40DB equivalent finder
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KMB054N40DB replacement
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History: KMB7D0N40QA
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