KMB3D5N40SA MOSFET Datasheet: N-Ch, 40V, 3.5A. Full specification with pinout and replacement list

KMB3D5N40SA Specs and Replacement

Type Designator: KMB3D5N40SA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SOT23

KMB3D5N40SA substitution

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KMB3D5N40SA datasheet

..1. Size:59K kec
kmb3d5n40sa.pdf pdf_icon

SEMICONDUCTOR KMB3D5N40SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for Load switch and Back-Light L B L Inverter. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/... See More ⇒

8.1. Size:465K kec
kmb3d5ps30qa.pdf pdf_icon

SEMICONDUCTOR KMB3D5PS30QA TECHNICAL DATA SBD and P-Ch Trench MOSFET GENERAL DESCRIPTION It is particularly suited for switching such as DC/DC Converters. It is driven as low as 4.5V and fast switching, high efficiency. H T FEATURES D P G L VDSS=-30V, ID=-3.5A. Drain-Source ON Resistance. A RDS(ON)=85m (Max.) @ VGS=-10V DIM MILLIMETERS A _ + RDS(ON)=180m (Max.) @ VGS=-4.5V 4.8... See More ⇒

9.1. Size:55K kec
kmb3d0p30sa.pdf pdf_icon

SEMICONDUCTOR KMB3D0P30SA TECHNICAL DATA P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching E time, low on resistance, low gate charge and excellent avalanche L B L DIM MILLIMETERS characteristics. It is mainly suitable for portable equipment. _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30... See More ⇒

9.2. Size:522K kec
kmb3d9n40ta.pdf pdf_icon

SEMICONDUCTOR KMB3D9N40TA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for Load switch and Back-Light B K DIM MILLIMETERS Inverter. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 _ C 0.70 + 0.05 2 3 _ D 0.4 + 0... See More ⇒

Detailed specifications: KMB054N40DB, KMB054N45DA, KMB060N40BA, KMB060N60FA, KMB060N60PA, KMB080N75PA, KMB2D0N60SA, KMB3D0P30SA, IRLB3034, KMB3D5PS30QA, KMB3D9N40TA, KMB4D0N30SA, KMB4D5DN60QA, KMB4D5NP55Q, KMB4D8DN55Q, KMB5D0NP40Q, KMB5D5NP30Q