KMB4D8DN55Q PDF and Equivalents Search

 

KMB4D8DN55Q Specs and Replacement

Type Designator: KMB4D8DN55Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.1 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: FLP8

KMB4D8DN55Q substitution

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KMB4D8DN55Q datasheet

 ..1. Size:369K  kec
 kmb4d8dn55q.pdf pdf_icon

KMB4D8DN55Q

SEMICONDUCTOR KMB4D8DN55Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=55V, ID=4.8A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=50m (Max.) @ VGS=10V _ 3... See More ⇒

 9.1. Size:389K  kec
 kmb4d5np55q.pdf pdf_icon

KMB4D8DN55Q

SEMICONDUCTOR KMB4D5NP55Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES N-Channel A VDSS=55V, ID=4.5A. DIM MILLIMETERS RDS(ON)=60m (Max.) @ VGS=10V A 5.05+0.25/-0.20 RDS(ON)=95m (Max.) @ ... See More ⇒

 9.2. Size:51K  kec
 kmb4d5dn60qa.pdf pdf_icon

KMB4D8DN55Q

SEMICONDUCTOR KMB4D5DN60QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter. H T D P G L FEATURES A VDSS=60V, ID=4.5A. DIM MILLIMETERS A _ + Drain-Source ON... See More ⇒

 9.3. Size:57K  kec
 kmb4d0n30sa.pdf pdf_icon

KMB4D8DN55Q

SEMICONDUCTOR KMB4D0N30SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for portable equipment. L B L DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX FEATURES 2 3 D 0.40+0.15/-0.05 ... See More ⇒

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Detailed specifications: KMB2D0N60SA, KMB3D0P30SA, KMB3D5N40SA, KMB3D5PS30QA, KMB3D9N40TA, KMB4D0N30SA, KMB4D5DN60QA, KMB4D5NP55Q, RU7088R, KMB5D0NP40Q, KMB5D5NP30Q, KMB6D0DN30QA, KMB6D0DN35QA, KMB6D0NP40QA, KMB6D6N30Q, KMB7D0DN40Q, KMB7D0DN40QA

Keywords - KMB4D8DN55Q MOSFET specs

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