KMB6D0DN30QA PDF and Equivalents Search

 

KMB6D0DN30QA Specs and Replacement

Type Designator: KMB6D0DN30QA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.6 nS

Cossⓘ - Output Capacitance: 111 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: FLP8

KMB6D0DN30QA substitution

- MOSFET ⓘ Cross-Reference Search

 

KMB6D0DN30QA datasheet

 ..1. Size:56K  kec
 kmb6d0dn30qa.pdf pdf_icon

KMB6D0DN30QA

SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS A _ + ... See More ⇒

 3.1. Size:374K  kec
 kmb6d0dn30qb.pdf pdf_icon

KMB6D0DN30QA

SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS D... See More ⇒

 5.1. Size:826K  kec
 kmb6d0dn35qb.pdf pdf_icon

KMB6D0DN30QA

SEMICONDUCTOR KMB6D0DN35QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for DC/DC Converters. T D P G L U FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS Drain-Source ON Resistance. _ + A... See More ⇒

 5.2. Size:60K  kec
 kmb6d0dn35qa.pdf pdf_icon

KMB6D0DN30QA

SEMICONDUCTOR KMB6D0DN35QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2... See More ⇒

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Detailed specifications: KMB3D5PS30QA, KMB3D9N40TA, KMB4D0N30SA, KMB4D5DN60QA, KMB4D5NP55Q, KMB4D8DN55Q, KMB5D0NP40Q, KMB5D5NP30Q, AO4407A, KMB6D0DN35QA, KMB6D0NP40QA, KMB6D6N30Q, KMB7D0DN40Q, KMB7D0DN40QA, KMB7D0N40QA, KMB7D0NP30Q, KMB7D0NP30QA

Keywords - KMB6D0DN30QA MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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