2N6659 Datasheet. Specs and Replacement
Type Designator: 2N6659 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 8 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO39
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2N6659 substitution
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2N6659 datasheet
2n6659.pdf
2N6659 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 8.89 (0.35) ENHANCEMENT MODE 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MOS TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. 8.51 (0.335) Switching Regulators dia. Converters 5.08 (0.200) typ. Motor Drivers 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045... See More ⇒
2n6659-2.pdf
2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified VDS (V) 35 Low On-Resistence 1.3 RDS(on) ( ) at VGS = 10 V 1.8 Low Threshold 1.7 V Configuration Single Low Input Capacitance 35 pF Fast Switching Speed 8 ns Low Input and Output Leakage TO-205AD BENEFITS (TO-39) Guarant... See More ⇒
2n6659x.pdf
N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X Switching Regulators Converters Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage 20V ID TC = 25 C Drain Current 1.4A ID TC = 100 C Drain Current 1.0A IDM1 Pulsed Drain Current 3A PD TC = 25 C Power Dissipation 6.25W... See More ⇒
Detailed specifications: 2N4416, 2N5045, 2N5484, 2N5485, 2N5486, 2N6656, 2N6657, 2N6658, AON6414A, 2N6659-LCC4, 2N6659-SM, 2N6660, 2N6660JAN, 2N6660JANTX, 2N6660JANTXV, 2N6660-LCC4, 2N6660-SM
Keywords - 2N6659 MOSFET specs
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