KMB7D6NP30Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: KMB7D6NP30Q
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7.6(5.3)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10.5
nC
trⓘ - Rise Time: 27.5(20.5)
nS
Cossⓘ -
Output Capacitance: 213(161)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014(0.035)
Ohm
Package:
FLP8
KMB7D6NP30Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KMB7D6NP30Q
Datasheet (PDF)
..1. Size:388K kec
kmb7d6np30q.pdf 
SEMICONDUCTOR KMB7D6NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=7.6A.A 5.05+0.25/-0.20: RDS(ON)=20m (Max.) @ VGS=10V_3.90 + 0.3B18 5
9.1. Size:370K kec
kmb7d0n40qa.pdf
SEMICONDUCTOR KMB7D0N40QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in pc, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _+VDSS=4
9.2. Size:461K kec
kmb7d0dn40q.pdf
SEMICONDUCTOR KMB7D0DN40QTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AVDSS=40V, ID=7A.DIM MILLIMETERSLow Drain-Source ON Resistance.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V _3.90
9.3. Size:65K kec
kmb7d1dp30qa.pdf
SEMICONDUCTOR KMB7D1DP30QATECHNICAL DATA Dual P-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for portable equipment and LoadHTSwitch.D PG LFEATURES ADIM MILLIMETERSVDSS=-30V, ID=-7.1AA _4.85 0.2+B1 _
9.4. Size:81K kec
kmb7d0dn40qa.pdf
SEMICONDUCTOR KMB7D0DN40QATECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in PC, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _VDS
9.5. Size:88K kec
kmb7d0np30qa.pdf
SEMICONDUCTOR KMB7D0NP30QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for Back-light Inverter.HTD PG LFEATURES N-ChannelA: VDSS=30V, ID=7A.DIM MILLIMETERSA _+: RDS(ON)=23.5m (Max.) @ VGS=10V 4.85 0.2B1 _3.94 + 0.2: RDS(ON)=39m (Max.) @ VGS=4.5VB2 _6.02+ 0.38 5D _
9.6. Size:393K kec
kmb7d0np30q.pdf
SEMICONDUCTOR KMB7D0NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=7A.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V_3.90 + 0.3B18 5 _
9.7. Size:833K kec
kmb7d0dn40qb.pdf
SEMICONDUCTOR KMB7D0DN40QBTECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for power management in PC, portableTequipment and battery powered systems. D P GLUAFEATURES DIM MILLIMETERSVDS
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