KMB7D6NP30Q MOSFET Datasheet: NP-Ch, 30V, 7.6(5.3)A. Full specification with pinout and replacement list

KMB7D6NP30Q Specs and Replacement

Type Designator: KMB7D6NP30Q

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6(5.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27.5(20.5) nS

Cossⓘ - Output Capacitance: 213(161) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014(0.035) Ohm

Package: FLP8

KMB7D6NP30Q substitution

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KMB7D6NP30Q datasheet

..1. Size:388K kec
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SEMICONDUCTOR KMB7D6NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS VDSS=30V, ID=7.6A. A 5.05+0.25/-0.20 RDS(ON)=20m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5 ... See More ⇒

9.1. Size:370K kec
kmb7d0n40qa.pdf pdf_icon

SEMICONDUCTOR KMB7D0N40QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ + VDSS=4... See More ⇒

9.2. Size:461K kec
kmb7d0dn40q.pdf pdf_icon

SEMICONDUCTOR KMB7D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=40V, ID=7A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90... See More ⇒

9.3. Size:65K kec
kmb7d1dp30qa.pdf pdf_icon

SEMICONDUCTOR KMB7D1DP30QA TECHNICAL DATA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and Load H T Switch. D P G L FEATURES A DIM MILLIMETERS VDSS=-30V, ID=-7.1A A _ 4.85 0.2 + B1 _... See More ⇒