All MOSFET. KMB6D0DN30QB Datasheet

 

KMB6D0DN30QB MOSFET. Datasheet pdf. Equivalent


   Type Designator: KMB6D0DN30QB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27.7 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: FLP8

 KMB6D0DN30QB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMB6D0DN30QB Datasheet (PDF)

 ..1. Size:374K  kec
 kmb6d0dn30qb.pdf

KMB6D0DN30QB KMB6D0DN30QB

SEMICONDUCTOR KMB6D0DN30QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for portable equipment and DC-DCTConverter Applications. D P GLUFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSD

 3.1. Size:56K  kec
 kmb6d0dn30qa.pdf

KMB6D0DN30QB KMB6D0DN30QB

SEMICONDUCTOR KMB6D0DN30QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for portable equipment and DC-DC HTConverter Applications.D PG LFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSA _+

 5.1. Size:826K  kec
 kmb6d0dn35qb.pdf

KMB6D0DN30QB KMB6D0DN30QB

SEMICONDUCTOR KMB6D0DN35QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for DC/DC Converters.TD P GLUFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSDrain-Source ON Resistance._+A

 5.2. Size:60K  kec
 kmb6d0dn35qa.pdf

KMB6D0DN30QB KMB6D0DN30QB

SEMICONDUCTOR KMB6D0DN35QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converters. HTD PG LFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT6025SVFRG | 2SK484 | 2SK2885S

 

 
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