All MOSFET. KMB6D0DN30QB Datasheet

 

KMB6D0DN30QB Datasheet and Replacement


   Type Designator: KMB6D0DN30QB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.7 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: FLP8
 

 KMB6D0DN30QB substitution

   - MOSFET ⓘ Cross-Reference Search

 

KMB6D0DN30QB Datasheet (PDF)

 ..1. Size:374K  kec
kmb6d0dn30qb.pdf pdf_icon

KMB6D0DN30QB

SEMICONDUCTOR KMB6D0DN30QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for portable equipment and DC-DCTConverter Applications. D P GLUFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSD

 3.1. Size:56K  kec
kmb6d0dn30qa.pdf pdf_icon

KMB6D0DN30QB

SEMICONDUCTOR KMB6D0DN30QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for portable equipment and DC-DC HTConverter Applications.D PG LFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSA _+

 5.1. Size:826K  kec
kmb6d0dn35qb.pdf pdf_icon

KMB6D0DN30QB

SEMICONDUCTOR KMB6D0DN35QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for DC/DC Converters.TD P GLUFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSDrain-Source ON Resistance._+A

 5.2. Size:60K  kec
kmb6d0dn35qa.pdf pdf_icon

KMB6D0DN30QB

SEMICONDUCTOR KMB6D0DN35QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converters. HTD PG LFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2

Datasheet: KF17N50N , KF50N06P , KTK919S , KTK920BT , KTK920BU , KTK920T , KTK920U , KMB035N40DA , IRFP250N , KMB6D0NS30QA , KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V .

History: KIA4706A | IRLZ24L | SFP026N100C3 | SI7302DN | SSF6008 | IRLU3714ZPBF | SSP65R190S3

Keywords - KMB6D0DN30QB MOSFET datasheet

 KMB6D0DN30QB cross reference
 KMB6D0DN30QB equivalent finder
 KMB6D0DN30QB lookup
 KMB6D0DN30QB substitution
 KMB6D0DN30QB replacement

 

 
Back to Top

 


 
.