All MOSFET. KU086N10F Datasheet

 

KU086N10F MOSFET. Datasheet pdf. Equivalent


   Type Designator: KU086N10F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
   Package: TO220IS

 KU086N10F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KU086N10F Datasheet (PDF)

 6.1. Size:417K  kec
 ku086n10p f.pdf

KU086N10F KU086N10F

KU086N10P/FSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description KU086N10PAThis Trench MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for DC/DC Converter,E DIM MILLIMETERSG_Synchronous Rectification and a load switch in battery powered +

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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