KU086N10F PDF and Equivalents Search

 

KU086N10F Specs and Replacement

Type Designator: KU086N10F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 230 nS

Cossⓘ - Output Capacitance: 630 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm

Package: TO220IS

KU086N10F substitution

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KU086N10F datasheet

 6.1. Size:417K  kec
 ku086n10p f.pdf pdf_icon

KU086N10F

KU086N10P/F SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description KU086N10P A This Trench MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for DC/DC Converter, E DIM MILLIMETERS G _ Synchronous Rectification and a load switch in battery powered + ... See More ⇒

Detailed specifications: KMD6D0DN30QA, KMD6D0DN40Q, KMD7D5P40QA, KMD9D0DN30QA, KML0D3P20V, KML0D4N20V, KU035N06P, KU047N08P, 2N7002, KU086N10P, KU310N10D, KU310N10P, KF10N60F, KF10N60P, KF10N68F, KF11N50F, KF11N50P

Keywords - KU086N10F MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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