KU310N10D MOSFET. Datasheet pdf. Equivalent
Type Designator: KU310N10D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: DPAK
KU310N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KU310N10D Datasheet (PDF)
ku310n10d.pdf
KU310N10DSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES VDSS= 100V, ID= 27A
ku310n10p.pdf
KU310N10PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES VDSS= 100V, ID= 34A
ku310n10f.pdf
KU310N10P/FSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description KU310N10PThis Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES KVDSS= 1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFK72N20
History: IXFK72N20
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