KU310N10P
MOSFET. Datasheet pdf. Equivalent
Type Designator: KU310N10P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 34
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 49
nC
trⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
TO220AB
KU310N10P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KU310N10P
Datasheet (PDF)
..1. Size:1061K kec
ku310n10p.pdf
KU310N10PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES VDSS= 100V, ID= 34A
6.1. Size:1057K kec
ku310n10d.pdf
KU310N10DSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES VDSS= 100V, ID= 27A
6.2. Size:1278K kec
ku310n10f.pdf
KU310N10P/FSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description KU310N10PThis Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES KVDSS= 1
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