All MOSFET. KF13N50F Datasheet

 

KF13N50F Datasheet and Replacement


   Type Designator: KF13N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO220IS
 

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KF13N50F Datasheet (PDF)

 7.1. Size:901K  kec
 kf13n50p-f.pdf pdf_icon

KF13N50F

KF13N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF13N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 500V, ID= 13ADra

 9.1. Size:65K  kec
 kf13n60n.pdf pdf_icon

KF13N50F

KF13N60NSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching mode _A +15.60 0.20_B4.80 + 0.20power supplies._

Datasheet: KF10N60F , KF10N60P , KF10N68F , KF11N50F , KF11N50P , KF12N60F , KF12N60P , KF12N68F , RFP50N06 , KF13N50P , KF16N50F , KF1N60D , KF1N60I , KF1N60L , KF2N60D , KF2N60F , KF2N60I .

History: IPP70N12S3-11 | G2002L

Keywords - KF13N50F MOSFET datasheet

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