KF2N60D MOSFET. Datasheet pdf. Equivalent
Type Designator: KF2N60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: DPAK
KF2N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF2N60D Datasheet (PDF)
kf2n60d-i.pdf
KF2N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF2N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching mode LC D_A 6.60 + 0.20_B 6.10 + 0.20power supplies.
kf2n60p-f.pdf
KF2N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF2N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9
kf2n60l.pdf
KF2N60LSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description B DDIM MILLIMETERSThis planar stripe MOSFET has better characteristics, such as fastA 7.20 MAXswitching time, low on resistance, low gate charge and excellent B 5.20 MAXC 0.60 MAXavalanche characteristics. It is mainly suitable for switching mode PD 2.50 MAXDEPTH:0.2E 1.15 MAX
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BUZ345 | STP45NE06 | MP4N60ER
History: BUZ345 | STP45NE06 | MP4N60ER
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