KF3N50FS
MOSFET. Datasheet pdf. Equivalent
Type Designator: KF3N50FS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO220IS
KF3N50FS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF3N50FS
Datasheet (PDF)
7.1. Size:82K kec
kf3n50fz-fs.pdf
KF3N50FZ/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERS_A 10.16 0.2+electronic ballast and switchin
8.1. Size:382K kec
kf3n50dz-ds.pdf
KF3N50DZ/DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable forLC D_A 6.60 + 0.20_electronic ballast and s
8.2. Size:404K kec
kf3n50dz-iz.pdf
KF3N50DZ/IZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF3N50DZThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable forLC D_A 6.60 + 0.20_electronic bal
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