KF3N50IZ Specs and Replacement
Type Designator: KF3N50IZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: IPAK
KF3N50IZ substitution
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KF3N50IZ datasheet
kf3n50fz-fs.pdf
KF3N50FZ/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS _ A 10.16 0.2 + electronic ballast and switchin... See More ⇒
kf3n50dz-ds.pdf
KF3N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ electronic ballast and s... See More ⇒
kf3n50dz-iz.pdf
KF3N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ electronic bal... See More ⇒
Detailed specifications: KF2N60P, KF3N40D, KF3N40I, KF3N40W, KF3N50DS, KF3N50DZ, KF3N50FS, KF3N50FZ, 2SK3568, KF3N60D, KF3N60F, KF3N60I, KF3N60P, KF3N80F, KF4N20LD, KF4N20LI, KF4N20LW
Keywords - KF3N50IZ MOSFET specs
KF3N50IZ cross reference
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