KF3N60P
MOSFET. Datasheet pdf. Equivalent
Type Designator: KF3N60P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 73
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8
Ohm
Package:
TO220AB
KF3N60P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF3N60P
Datasheet (PDF)
0.1. Size:94K kec
kf3n60p-f.pdf
KF3N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF3N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9
8.1. Size:1008K kec
kf3n60d-i.pdf
KF3N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF3N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode power supp
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