KF3N60P Specs and Replacement
Type Designator: KF3N60P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO220AB
KF3N60P substitution
- MOSFET ⓘ Cross-Reference Search
KF3N60P datasheet
kf3n60p-f.pdf
KF3N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9 ... See More ⇒
kf3n60d-i.pdf
KF3N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power supp... See More ⇒
Detailed specifications: KF3N50DS, KF3N50DZ, KF3N50FS, KF3N50FZ, KF3N50IZ, KF3N60D, KF3N60F, KF3N60I, SI2302, KF3N80F, KF4N20LD, KF4N20LI, KF4N20LW, KF4N65F, KF4N65P, KF4N80F, KF5N50D
Keywords - KF3N60P MOSFET specs
KF3N60P cross reference
KF3N60P equivalent finder
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KF3N60P substitution
KF3N60P replacement
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