All MOSFET. KF4N65P Datasheet

 

KF4N65P MOSFET. Datasheet pdf. Equivalent

Type Designator: KF4N65P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83.3 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 2.1 Ohm

Package: TO220AB

KF4N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

KF4N65P Datasheet (PDF)

1.1. kf4n65p_f.pdf Size:414K _kec

KF4N65P
KF4N65P

KF4N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power supplies.

Datasheet: KF3N60F , KF3N60I , KF3N60P , KF3N80F , KF4N20LD , KF4N20LI , KF4N20LW , KF4N65F , 2N3824 , KF4N80F , KF5N50D , KF5N50DS , KF5N50DZ , KF5N50F , KF5N50FS , KF5N50FSA , KF5N50FZ .

 


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