KF5N60FZ
MOSFET. Datasheet pdf. Equivalent
Type Designator: KF5N60FZ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 57
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7
Ohm
Package:
TO220IS
KF5N60FZ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF5N60FZ
Datasheet (PDF)
..1. Size:393K kec
kf5n60fz.pdf
KF5N60P/F/PZ/FZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60P, KF5N60PZAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode pow
7.1. Size:93K kec
kf5n60p kf5n60f.pdf
KF5N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9
8.1. Size:93K kec
kf5n60p-f.pdf
KF5N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9
8.2. Size:385K kec
kf5n60d i.pdf
KF5N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20ele
Datasheet: WPB4002
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