KF9N50P PDF and Equivalents Search

 

KF9N50P Specs and Replacement

Type Designator: KF9N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm

Package: TO220AB

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KF9N50P datasheet

 0.1. Size:888K  kec
 kf9n50p-f.pdf pdf_icon

KF9N50P

KF9N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF9N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent DIM avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 9... See More ⇒

Detailed specifications: KF7N68F, KF7N80F, KF8N60F, KF8N60P, KF9N25D, KF9N25F, KF9N25P, KF9N50F, IRF640N, KF3N80D, KF3N80I, KF60N06P, KHB1D0N60D, KHB1D0N70G, KHB1D9N60D, KHB1D9N60I, KHB2D0N60F

Keywords - KF9N50P MOSFET specs

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